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In this paper, a broadband achromatic focusing metasurface design scheme based on the equivalent circuit theory and optimized by a deep learning method is proposed. The designed metasurface element consists of multilayer metal rings and a grounding layer, and the phase modulation effect of achromatic aberration in a wide frequency range is realized by precisely controlling the distance between the layers. The preparation of this complex structure is realized by using additive manufacturing technology, which effectively overcomes the limitations of traditional printed circuit board technology in manufacturing complex structures. To further improve the design efficiency, deep conditional generative adversarial network is introduced in this paper to quickly determine the structural parameters and realize the inverse design, which significantly improves the efficiency and accuracy of the metasurface structure design. The experimental results show that the metasurface possesses good focusing performance in the 17 to 35 GHz band with an effective bandwidth utilization of 69.2 %. The design method proposed in this study combines artificial intelligence and additive manufacturing technology, which provides new design ideas for applications in the fields of communication, optics and wireless energy transmission. 

Abstract One-dimensional chiral interface channels can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction may function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a one-dimensional junction. For the junction between Chern numbers of 1 and −1, we observe quantized transport and demonstrate the appearance of the two parallel propagating chiral interface channels along the magnetic domain wall at zero magnetic field. For the junction between Chern numbers of 1 and 2, our quantized transport shows that a single chiral interface channel appears at the interface. Our work lays the foundation for the development of QAH insulator-based electronic and spintronic devices and topological chiral networks. 

Ultra-high purity elemental sources have long been considered a prerequisite for obtaining low impurity concentrations in compound semiconductors in the world of molecular beam epitaxy (MBE) since its inception in 1968. However, we demonstrate that a “dirty” solid precursor, ruthenium(III) acetylacetonate [also known as Ru(acac)3], can yield single-phase, epitaxial, and superconducting Sr2RuO4 films with the same ease and control as III–V MBE. A superconducting transition was observed at ∼0.9 K, suggesting a low defect density and a high degree of crystallinity in these films. In contrast to the conventional MBE, which employs the ultra-pure Ru metal evaporated at ∼2000 °C as a Ru source, along with reactive ozone to obtain Ru → Ru4+ oxidation, the use of the Ru(acac)3 precursor significantly simplifies the MBE process by lowering the temperature for Ru sublimation (less than 200 °C) and by eliminating the need for ozone. Combining these results with the recent developments in hybrid MBE, we argue that leveraging the precursor chemistry will be necessary to realize next-generation breakthroughs in the synthesis of atomically precise quantum materials.